Spin-polarized light-emitting diode using metal/insulator/semiconductor structures

被引：88

作者：

Manago, T ^{[1
]}

Akinaga, H ^{[1
]}

机构：

[1] Natl Inst Adv Ind Sci & Technol, Res Consortium Synth NanoFunct Mat Project, Tsukuba, Ibaraki 3058562, Japan

来源：

APPLIED PHYSICS LETTERS | 2002年 / 81卷 / 04期

关键词：

D O I：

10.1063/1.1496493

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have succeeded in growing ferromagnetic metals (Co, Fe, and NiFe)/Al2O3/AlGaAs heterostructures with homogeneous flat interfaces. The electroluminescence from a light-emitting diode with a metal/insulator/semiconductor (MIS) structure depends on the magnetization direction of the ferromagnetic electrode. This fact shows that a spin injection from the ferromagnetic metal to the semiconductor is achieved. The spin-injection efficiency is estimated to be the order of 1% at room temperature. (C) 2002 American Institute of Physics.

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页码：694 / 696

页数：3

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