Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires

被引：117

作者：

Hoang, Thang B. ^{[1
]}

Moses, A. F. ^{[1
]}

Zhou, H. L. ^{[1
]}

Dheeraj, D. L. ^{[1
]}

Fimland, B. O. ^{[1
]}

Weman, H. ^{[1
]}

机构：

[1] Norwegian Univ Sci & Technol, Dept Elect & Telecommun, NO-7491 Trondheim, Norway

来源：

APPLIED PHYSICS LETTERS | 2009年 / 94卷 / 13期

关键词：

defect states; excitons; gallium arsenide; III-V semiconductors; impurity states; molecular beam epitaxial growth; nanowires; photoluminescence; transmission electron microscopy;

D O I：

10.1063/1.3104853

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microphotoluminescence measurements are used to investigate the optical properties of single wurtzite GaAs nanowires grown by molecular beam epitaxy. The wurtzite GaAs nanowires exhibit a photoluminescence emission peak at 1.544 eV, 29 meV higher than the zinc blende GaAs free exciton energy. Temperature dependent photoluminescence measurements (4.4-70 K) show indications of defect and impurity related emissions at lower energies (1.53-1.54 eV) and the presence of nonradiative defects. High resolution transmission electron microscopy images show a low density of short zinc blende segments sandwiched in between a dominating wurtzite structure and weak photoluminescence emission related to such zinc blende segments is also observed.

引用

页数：3

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