The 2-D-3-D crossover in modulation-doped GaAs-Ga1-xAlxAs quantum wells

被引：4

作者：

Qu, FY

Morais, PC

机构：

[1] Departamento de Física, Universidade de Brasília

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1997年 / 33卷 / 09期

关键词：

charge carrier processes; electrooptic materials; optical control; quantum wells; semiconductor materials;

D O I：

10.1109/3.622628

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on a method to analyze the 2-D-3-D crossover in n-type modulation-doped quantum webs, Finite well barrier, first and second subband population, many-body effects, and residual doping are included in our calculation, We found that the 2-D-3-D crossover remarkably depends not only upon the geometrical parameters, as for instance, the spacer layer width and quantum-well width, but also upon a residual p-type doping intentionally introduced, A diagram showing the 2-D-3-D dimensional crossover is presented.

引用

页码：1492 / 1497

页数：6

共 16 条

[1] Investigation of many-body effects in one-side modulation-doped InP-InGaAs heterostructure [J].