DC, small-signal, and noise characteristics of 0.1 mu m AlSb/InAs HEMTs

We report on the de and small-signal characteristics of 0.1 mu m AlSb/InAs HEMTs, These recessed-gate devices have an In0.4Al0.6As/AlSb composite barrier above the InAs quantum well and a p(+) GaSb layer within the AlSb buffer layer. The devices exhibit a transconductance of 600 mS/mm and an f(T) of 120 GHz at V-DS = 0.6 V. An intrinsic f(T) of 150 GHz is obtained after removal of the gate bonding pad capacitance. 0.5 mu m HEMTs on the same wafer exhibit a transconductance of 1 S/mm and an intrinsic f(T)Lg product of 50 GHz-mu m. At 4 GHz, the 0.1 mu m HEMTs have a minimum noise figure of 1 dB with 14 dB associated gain at V-DS = 0.4 V.