Photoluminescence and reflectance studies of negatively charged excitons in GaAs/Al0.3Ga0.7As quantum-well structures

被引：13

作者：

Kioseoglou, G ^{[1
]}

Cheong, HD

Nickel, HA

Petrou, A

McCombe, BD

Schaff, W

机构：

[1] SUNY Buffalo, Dept Phys, Buffalo, NY 14260 USA

[2] SUNY Buffalo, Ctr Adv Photon & Elect Mat, Buffalo, NY 14260 USA

[3] Cornell Univ, Ithaca, NY 14853 USA

来源：

PHYSICAL REVIEW B | 2000年 / 61卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.61.4780

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the results of a systematic photoluminescence and reflectance study of negatively charged excitons (X-) in several GaAs/AlxGa1-xAs quantum well structures. Samples are either doped n-type in the wells or not intentionally doped, and thus the appearance of X- (present in modulation doped samples) is not expected. The combination of the two spectroscopies allowed us to explore the possible mechanisms responsible for the formation of the X- complex, in all cases the X- signature is related to excess electrons in the wells. These results provide positive evidence that the original identification of the X- photoluminescence feature is correct.

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页码：4780 / 4785

页数：6

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