Sulfur segregation to growing Al2O3/alloy interfaces

被引：33

作者：

Hou, PY ^{[1
]}

机构：

[1] Univ Calif Berkeley, Lawrence Berkeley Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

JOURNAL OF MATERIALS SCIENCE LETTERS | 2000年 / 19卷 / 07期

关键词：

D O I：

10.1023/A:1006774111370

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this study, the impurity segregation at growing Al2O3/alloy interfaces was shown to take place even on very thin and adherent scales. However, this behavior was surprisingly different from surface segregation and depended on the type of substrates and the oxide formation processes. Results suggest that the level of sulfur aggregation at oxide/alloy interfaces may depend on the interfacial microstructure.

引用

页码：577 / 578

页数：2

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