Crystalline Si/Graphene Quantum Dots Heterojunction Solar Cells

被引:130
作者
Gao, Peng
Ding, Ke
Wang, Yan
Ruan, Kaiqun
Diao, Senlin
Zhang, Qing
Sun, Baoquan
Jie, Jiansheng [1 ]
机构
[1] Soochow Univ, Inst Funct Nano & Soft Mat FUNSOM, Suzhou 215123, Jiangsu, Peoples R China
基金
中国国家自然科学基金;
关键词
HIGH-EFFICIENCY; GRAPHENE OXIDE; PHOTOVOLTAIC DEVICES; ENERGY CONVERSION; BAND-GAP; LAYERS; INJECTION; TRANSPORT; SURFACES; FILMS;
D O I
10.1021/jp412591k
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070305 [高分子化学与物理];
摘要
Graphene quantum dots (GQDs) possess extraordinary optical and electrical properties and show great potential in energy applications. Here, with combing crystalline silicon (c-Si) and GQDs, a new type of solar cells based on the c-Si/GQDs heterojunction was developed. Thanks to the unique band structure of GQDs, photo-generated electron hole pairs could be effectively separated at the junction interface. The GQDs also served as an electron blocking layer to further prevent the carrier recombination at the anode. These characteristics endow the heterojunction solar cells with much enhanced photovoltaic performance compared to the device counterparts without GQDs or with graphene oxide sheets. Eventually, an optimum power conversion efficiency of 6.63% was obtained by tuning the GQDs size and layer thickness. Our results demonstrate the great potential of the c-Si/GQDs heterojunctions in future low-cost and high-efficiency solar cells.
引用
收藏
页码:5164 / 5171
页数:8
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