Stabilization of the cubic phase of HfO2 by Y addition in films grown by metal organic chemical vapor deposition

被引：91

作者：

Rauwel, E.

Dubourdieu, C.

Hollander, B.

Rochat, N.

Ducroquet, F.

Rossell, M. D.

Van Tendeloo, G.

Pelissier, B.

机构：

[1] Ecole Natl Super Phys Grenoble, Mat & Genie Phys Lab, CNRS, UMR 5628, F-38402 St Martin Dheres, France

[2] Forschungszentrum Julich, Ctr Nanoelect Syst Infromat Technol, D-52425 Julich, Germany

[3] Forschungszentrum Julich, ISG1, D-52425 Julich, Germany

[4] CEA, DRT, DPTS, SCPIO,LCPO, F-38054 Grenoble, France

[5] IMEP, F-38016 Grenoble, France

[6] Univ Antwerp, EMAT, B-2020 Antwerp, Belgium

[7] LTM, F-38054 Grenoble 9, France

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 01期

关键词：

D O I：

10.1063/1.2216102

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Addition of yttrium in HfO2 thin films prepared on silicon by metal organic chemical vapor deposition is investigated in a wide compositional range (2.0-99.5 at. %). The cubic structure of HfO2 is stabilized for 6.5 at. %. The permittivity is maximum for yttrium content of 6.5-10 at. %; in this range, the effective permittivity, which results from the contribution of both the cubic phase and silicate phase, is of 22. These films exhibit low leakage current density (5x10(-7) A/cm(2) at -1 V for a 6.4 nm film). The cubic phase is stable upon postdeposition high temperature annealing at 900 degrees C under NH3. (c) 2006 American Institute of Physics.

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页数：3

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