Arsenic removal using hydrous nanostructure iron(III)-titanium(IV) binary mixed oxide from aqueous solution

被引:211
作者
Gupta, Kaushik [1 ]
Ghosh, Uday Chand [1 ]
机构
[1] Presidency Coll, Dept Chem, Kolkata 700073, W Bengal, India
关键词
Arsenic-sorption; Nano-size; Iron(III)-titanium(IV) mixed-oxide; Removal; ADSORPTION; IRON; EQUILIBRIUM; GROUNDWATER; KINETICS; SORPTION; AS(III); AS(V); DIFFUSION; BEHAVIOR;
D O I
10.1016/j.jhazmat.2008.04.034
中图分类号
X [环境科学、安全科学];
学科分类号
08 ; 0830 ;
摘要
The synthetic bimetal iron(III)-titanium(IV) oxide (NHITO) used was characterized as hydrous and nanostructured mixed oxide, respectively, by the Fourier transform infra red (FTIR), X-ray diffraction (XRD) pattern and the transmission electron microscopic (TEM) image analyses. Removal of As(III) and As(V) using the NHITO was studied at pH 7.0 (+/- 0.1) with variation of contact time, solute concentration and temperature. The kinetic sorption data, in general. for As(Ill) described the pseudo-first order while that for As(V) described the pseudo-second order equation. The Langmuir isotherm described the equilibrium data (303 (+/- 1.6) K) of fit was well with the Langmuir model. The Langmuir capacity (q(m) mg g(-1)) value of the material is 85.0 (+/- 4.0) and 14.0 (+/- 0.5), respectively, for the reduced and oxidized species. The sorption reactions on NHITO were found to be endothermic and spontaneous, and took place with increasing entropy. The energy (kJ mol(-1)) of sorption for As(III) and As(V) estimated, respectively, is 9.09 (+/- 0.01) and 13.51 (+/- 0.04). The sorption percentage reduction of As(V) was significant while that of As(III) was insignificant in presence of phosphate and sulfate. The fixed bed NHITO column (5.1 cm x 1.0 cm) sorption tests gave 3.0, 0.7 and 4.5 L treated water (As content < 0.01 mg L-1) from separate As(Ill) and As(V) spiked (0.35 +/- 0.02 mg L-1) natural water samples and from high arsenic(0.11 +/- 0.01 mg L-1) ground water, respectively when inflow rate was (0.06 L h(-1)). (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:884 / 892
页数:9
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