Evaluation of (hfac)Cu(MHY) for CuCVD

Copper deposition using (hfac)Cu(MHY) (Gigacopper(R)) for interconnections metallization by Cu CVD is presented. We compared it to (hfac)Cu(VTMS) (Cupraselect(R)) in terms of deposition rate, specific resistivity and uniformity. Gigacopper(R) appears to give a higher deposition rate than Cupraselect(R) and about the same specific resistivity. Water addition is a critical point. It permits improved uniformity and specific resistivity provided it is added during the nucleation step in a very precise volume. We also studied the influence of other parameters, such as precursor flow rate and reactor pressure, on the film deposition. The use of Cu CVD as seed layer for Cu ECD depositions was also explored on full sheet wafers. Adhesion can be greatly enhanced by a specific anneal procedure with a slow cool down to limit stresses in the film. (C) 2002 Elsevier Science B.V. All rights reserved.