Nanoparticle-coated n-ZnO/p-Si photodiodes with improved photoresponsivities and acceptance angles for potential solar cell applications

被引：49

作者：

Chen, Cheng-Pin ^{[1
]}

Lin, Pei-Hsuan ^{[1
]}

Chen, Liang-Yi ^{[1
]}

Ke, Min-Yung ^{[1
]}

Cheng, Yun-Wei ^{[1
]}

Huang, JianJang ^{[1
,2
]}

机构：

[1] Natl Taiwan Univ, Grad Inst Photon & Optoelect, Taipei 106, Taiwan

[2] Natl Taiwan Univ, Dept Elect Engn, Taipei 106, Taiwan

来源：

NANOTECHNOLOGY | 2009年 / 20卷 / 24期

关键词：

ELECTRODES; SILICON; DIODE; FILMS;

D O I：

10.1088/0957-4484/20/24/245204

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

In this work, n-ZnO/p-Si photodiodes were fabricated and characterized to explore their potential applications in solar cells. With a coating of silica nanoparticles, we observed the enhancement of photoresponsivity and acceptance angle at a wavelength between 400 and 650 nm. The 17.6% increase of the photoresponsivity over the conventional device is due to the improved optical transmission toward the semiconductor through the silica nanoparticles. Furthermore, the acceptance angle of the nanoparticle coated device is dramatically increased, which is attributed to the effect of Bragg diffraction.

引用

页数：6

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