Fused-Ring Pyrazine Derivatives for n-Type Field-Effect Transistors

被引:41
作者
Wang, Haifeng [2 ]
Wen, Yugeng [2 ]
Yang, Xiaodi
Wang, Ying
Zhou, Weiyi [2 ]
Zhang, Shiming [2 ]
Zhan, Xiaowei [1 ]
Liu, Yunqi
Shuai, Zhigang
Zhu, Daoben
机构
[1] Chinese Acad Sci, Beijing Natl Lab Mol Sci, Beijing 100190, Peoples R China
[2] Chinese Acad Sci, Grad Univ, Beijing 100039, Peoples R China
基金
中国国家自然科学基金;
关键词
n-type organic semiconductor; field-effect transistor; fused-ring pyrazine; synthesis; density functional theory; structure-property relationship; HIGH-ELECTRON-MOBILITY; THIN-FILM TRANSISTORS; HIGH-PERFORMANCE; ORGANIC SEMICONDUCTORS; CHARGE-TRANSPORT; TRIFLUOROMETHYLPHENYL GROUPS; ORGANOMETALLIC REAGENTS; CRYSTAL-STRUCTURES; FET PROPERTIES; ALPHA-DIONES;
D O I
10.1021/am900093p
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Three new fused-ring pyrazine derivatives end-Functionalized with trifluoromethylphenyl groups have been synthesized. The effect of a fused-ring pyrazine core on the thermal, electronic, optical, thin Film morphology, and organic field-effect transistor (OFET) properties was investigated both experimentally and theoretically. Electrochemistry measurements and density functional theory calculations suggest that the pyrazine core plays a significant role in tuning the electron affinities OF these compounds. The optical absorption and fluorescence properties are also sensitive to the pyrazine core. The OFET devices based on the fused-ring pyrazine compounds exhibit electron mobilities as high as ca. 0.03 cm(2) V-1 s(-1) under nitrogen, and their performance is sensitive to the pyrazine core. The larger pyrazine core leads to a lower LUMO level and lower reorganization energy, to more ordered thin film morphology with larger grain size, and finally to higher mobilities.
引用
收藏
页码:1122 / 1129
页数:8
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