Chemical doping of individual semiconducting carbon-nanotube ropes

被引:156
作者
Bockrath, M [1 ]
Hone, J
Zettl, A
McEuen, PL
Rinzler, AG
Smalley, RE
机构
[1] Univ Calif Berkeley, Dept Phys, Berkeley, CA 94720 USA
[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA
[3] Rice Univ, Rice Quantum Inst, Ctr Nanoscale Sci & Technol, Houston, TX 77251 USA
[4] Rice Univ, Dept Chem & Phys, Houston, TX 77251 USA
来源
PHYSICAL REVIEW B | 2000年 / 61卷 / 16期
关键词
D O I
10.1103/PhysRevB.61.R10606
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We report the effects of potassium doping on the conductance of individual semiconducting single-walled carbon nanotube ropes. We are able to control the level of doping by reversibly intercalating and de-intercalating potassium. Potassium doping changes the carriers in the ropes from holes to electrons. Typical values for the carrier density are found to be similar to 100-1000 electrons/mu m. The effective mobility for the electrons is mu(eff)similar to 20-60 cm(2) V-1 s(-1), a value similar to that reported for the hole effective mobility in nanotubes [R. Martel et al., Appl. Phys. Lett. 73, 2447 (1998)].
引用
收藏
页码:10606 / 10608
页数:3
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