W-BAND transmitter module using gallium arsenide MMICS

被引：8

作者：

Archer, JW ^{[1
]}

Shen, MG ^{[1
]}

机构：

[1] CSIRO ICT Ctr, Epping, NSW 1710, Australia

来源：

MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 2004年 / 42卷 / 03期

关键词：

millimetre-wave transmitter module; gallium arsenide; MMIC; single-sideband;

D O I：

10.1002/mop.20255

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper describes a high-gain, single-sideband, upconverting transmitter module developed for point-to-point telecommunications in the 83-87-GHz hand. Four gallium arsenide (GaAs) monolithic microwave integrated circuits (MMICs), which can readily be fabricated using standard commercial processes, are used in the multichip module. The transmitter exhibits a typical lower-sideband up-conversion gain of 20 dB and a typical output power of +5 dBm (at -1-dB gain compression) between 83 and 87 GHz. Suppression of the higher sideband is greater than -15 dB. The two-tone, 3(rd)-order intercept point is typically +15 dBm for a tone spacing of 100 MHz at the lower sideband IF input. (C) 2004 Wiley Periodicals, Inc.

引用

页码：210 / 213

页数：4

共 7 条

[1] LOW-PARASITIC, PLANAR SCHOTTKY DIODES FOR MILLIMETER-WAVE INTEGRATED-CIRCUITS [J].