Al2O3 insulated-gate structure for AlGaN/GaN heterostructure field effect transistors having thin AlGaN barrier layers

被引：86

作者：

Hashizume, T ^{[1
]}

Anantathanasarn, S

Negoro, N

Sano, E

Hasegawa, H

Kumakura, K

Makimoto, T

机构：

[1] Hokkaido Univ, RCIQE, Sapporo, Hokkaido 0608628, Japan

[2] NTT Corp, NTT Basic Res Labs, Atsugi, Kanagawa 2430198, Japan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 2004年 / 43卷 / 6B期

关键词：

AlGaN; GaN; Al2O3; HFET; insulated gate; normally-off;

D O I：

10.1143/JJAP.43.L777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An Al2O3 insulated-gate (IG) structure was utilized for controlling the surface potential and suppressing the gate leakage in Al0.2Ga0.8N/GaN heterostructure field effect transistors (HFETs) having thin AlGaN barrier layers (less than 10 nm). In comparison with the Schottky-gate devices, the Al2O3 IG device showed successful gate control of drain current up to V-GS = +4V without leakage problems. The threshold voltage in the Al2O3 IG HFET was about -0.3V, resulting in the quasi-normally-off mode operation.

引用

页码：L777 / L779

页数：3

共 21 条

[1] Effects of interfacial oxides on Schottky barrier contacts to n- and p-type GaN [J].

Cao, XA ;

Pearton, SJ ;

Dang, G ;

Zhang, AP ;

Ren, F ;

Van Hove, JM .

APPLIED PHYSICS LETTERS, 1999, 75 (26) :4130-4132

[2] Current transport mechanisms in GaN-based metal-semiconductor-metal photodetectors [J].

Carrano, JC ;

Li, T ;

Grudowski, PA ;

Eiting, CJ ;

Dupuis, RD ;

Campbell, JC .

APPLIED PHYSICS LETTERS, 1998, 72 (05) :542-544

[3] Mechanism of anomalous current transport in n-type GaN Schottky contacts [J].

Hasegawa, H ;

Oyama, S .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2002, 20 (04) :1647-1655

[4] Chemistry and electrical properties of surfaces of GaN and GaN/AlGaN heterostructures [J].

Hashizume, T ;

Ootomo, S ;

Oyama, S ;

Konishi, M ;

Hasegawa, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2001, 19 (04) :1675-1681

[5] Surface passivation of GaN and GaN/AlGaN heterostructures by dielectric films and its application to insulated-gate heterostructure transistors [J].

Hashizume, T ;

Ootomo, S ;

Inagaki, T ;

Hasegawa, H .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2003, 21 (04) :1828-1838

[6] Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric [J].

Hashizume, T ;

Ootomo, S ;

Hasegawa, H .

APPLIED PHYSICS LETTERS, 2003, 83 (14) :2952-2954

[7] Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate [J].

Hu, X ;

Simin, G ;

Yang, J ;

Khan, MA ;

Gaska, R ;

Shur, MS .

ELECTRONICS LETTERS, 2000, 36 (08) :753-754

[8] Effects of nitrogen addition on methane-based ECR plasma etching of gallium nitride [J].

Jin, Z ;

Hashizume, T ;

Hasegawa, H .

APPLIED SURFACE SCIENCE, 2002, 190 (1-4) :361-365

[9] Mechanism of the reverse gate leakage in AlGaN/GaN high electron mobility transistors [J].

Karmalkar, S ;

Sathaiya, DM ;

Shur, MS .

APPLIED PHYSICS LETTERS, 2003, 82 (22) :3976-3978

[10]

Khan MA, 1996, APPL PHYS LETT, V68, P514, DOI 10.1063/1.116384

← 1 2 3 →