Influence of redistribution of electrons in the conduction band on the lattice parameters of AlxGa1-xAs

被引：5

作者：

BakMisiuk, J ^{[1
]}

Leszczynski, M ^{[1
]}

Paszkowicz, W ^{[1
]}

Domagala, J ^{[1
]}

机构：

[1] POLISH ACAD SCI,HIGH PRESSURE RES CTR,PL-01142 WARSAW,POLAND

来源：

APPLIED PHYSICS LETTERS | 1996年 / 69卷 / 22期

关键词：

D O I：

10.1063/1.117308

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice parameters of GaAs layers were measured using the Bond method. For samples heavily doped with S and Se, we observed an increase of lattice parameters with respect to the undoped samples. The results are compared with those observed for AlxGa1-xAs:S (Wagner et al.)(12) and both are explained by the influence of free electrons and their redistribution in the conduction band. For Al0.39Ga0.61As, the following values of deformation potentials of the conduction-band minima were obtained: D-Gamma = - 6.7 eV, D-L = 1.4 eV, and D-X = 1 eV. (C) 1996 American Institute of Physics.

引用

页码：3366 / 3368

页数：3

共 20 条

[1] GAAS, ALAS, AND ALXGA1-XAS - MATERIAL PARAMETERS FOR USE IN RESEARCH AND DEVICE APPLICATIONS [J].

ADACHI, S .

JOURNAL OF APPLIED PHYSICS, 1985, 58 (03) :R1-R29

[2]

ADACHI S, 1993, EMIS DATAREVIEWS SER, V7, P25

[3] TEMPERATURE-DEPENDENCE OF THE LATTICE-CONSTANT IN DOPED AND NONSTOICHIOMETRIC GAAS, GAAS1-CHIP-CHI, AND GAP [J].

BAKMISIUK, J ;

BRUHL, HG ;

PASZKOWICZ, W ;

PIETSCH, U .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (02) :451-457

[4] Lattice constants and thermal expansion of AlxGa1-xAs:Te [J].

BakMisiuk, J ;

Leszczynski, M ;

Domagala, J ;

Zytkiewicz, Z .

JOURNAL OF APPLIED PHYSICS, 1995, 78 (12) :6994-6998

[5] PRECISION LATTICE CONSTANT DETERMINATION [J].

BOND, WL .

ACTA CRYSTALLOGRAPHICA, 1960, 13 (10) :814-818

[6] ACOUSTIC DEFORMATION POTENTIALS AND HETEROSTRUCTURE BAND OFFSETS IN SEMICONDUCTORS [J].

CARDONA, M ;

CHRISTENSEN, NE .

PHYSICAL REVIEW B, 1987, 35 (12) :6182-6194

[7] LATTICE STRAIN FROM DX CENTERS AND PERSISTENT PHOTOCARRIERS IN SN-DOPED AND SI-DOPED GA1-XALXAS [J].

CARGILL, GS ;

SEGMULLER, A ;

KUECH, TF ;

THEIS, TN .

PHYSICAL REVIEW B, 1992, 46 (16) :10078-10085

[8] LATTICE COMPRESSION FROM CONDUCTION ELECTRONS IN HEAVILY DOPED SI-AS [J].

CARGILL, GS ;

ANGILELLO, J ;

KAVANAGH, KL .

PHYSICAL REVIEW LETTERS, 1988, 61 (15) :1748-1751

[9]

CASEY C, 1978, HETEROSTRUCTURE LA A

[10] PHYSICAL-PROPERTIES OF ION-IMPLANTED LASER ANNEALED NORMAL-TYPE GERMANIUM [J].

CONTRERAS, G ;

TAPFER, L ;

SOOD, AK ;

CARDONA, M .

PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 131 (02) :475-487

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