Random telegraph signals in a radiation-hardened CMOS active pixel sensor

被引：53

作者：

Bogaerts, J ^{[1
]}

Dierickx, B

Mertens, R

机构：

[1] Imec VZW, B-3001 Heverlee, Belgium

[2] Katholieke Univ Leuven, Elect Engn Dept, B-3000 Louvain, Belgium

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2002年 / 49卷 / 01期

关键词：

CMOS active pixel sensor (APS); displacement damage; random telegraph signal (RTS);

D O I：

10.1109/TNS.2002.998649

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The random telegraph signal (RTS) behavior of the dark current has been studied in a radiation-hardened CMOS active pixel sensor (APS). Several devices have been irradiated with protons of different energies and up to different fluences. The influence of the proton energy, fluence, and operating temperature on the amplitude, time constants, and occurrence of the RTS is investigated. Mechanisms for this behavior are discussed and several suggestions are made for possible defect types.

引用

页码：249 / 257

页数：9

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[1] DEFECT CLUSTERING IN SILICON EMITTER JUNCTIONS [J].