Electron spin relaxation beyond D'yakonov-Perel' interaction in GaAs/AlGaAs quantum wells

被引：36

作者：

Ohno, Y ^{[1
]}

Terauchi, R ^{[1
]}

Adachi, T ^{[1
]}

Matsukura, F ^{[1
]}

Ohno, H ^{[1
]}

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Lab Elect Intelligent Syst, Aoba Ku, Sendai, Miyagi 9808577, Japan

来源：

PHYSICA E | 2000年 / 6卷 / 1-4期

基金：

日本学术振兴会;

关键词：

electron spin relaxation; D'yakonov-Perel' interaction; GaAs/AlGaAs (110) quantum wells;

D O I：

10.1016/S1386-9477(99)00251-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

To study electron spin relaxation mechanisms in GaAs/AlGaAs quantum wells (QWs), undoped and n-doped (100) and (110) QWs with different well width and doping density are prepared and measured. The temperature dependence of electron spin relaxation time tau(s) in n-doped (100) QWs above 30 K is shown to be in good agreement with what is expected from the D'yakonov-Perel' (DP) mechanism. In (110) QWs, a 30-fold increase of tau(s), over (100) QWs at room temperature is observed. This dramatic increase is explained by the suppression of the DP mechanism. The remaining spin relaxation processes in (110) QWs are discussed. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：817 / 820

页数：4

共 14 条

[1] Exciton spin dynamics in GaAs quantum wells [J].