Combinatorial approach for the synthesis of terpolymers and their novel application as very-high-contrast resists for x-ray nanolithography

被引:13
作者
Gonsalves, KE
Wang, JZ
Wu, HP
机构
[1] Univ Connecticut, Inst Mat Sci, Polymer Program, Storrs, CT 06269 USA
[2] Univ Connecticut, Dept Chem, Storrs, CT 06269 USA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2000年 / 18卷 / 01期
关键词
D O I
10.1116/1.591193
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Novel resist systems for x-ray lithography, specifically optimized in terms of contrast enhancement are described. Based on terpolymers of methyl methacrylate (MMA)-tert-butylacrylate-polyhedral oligosilsesquioxanes (POSS) synthesized by solution polymerization, these systems were optimized by a combinatorial approach. It is shown that the mass ratio of MMA/POSS=85.7/14.3 leads to maximum contrast (23.5) without sacrificing the sensitivity (1350 mJ/cm(2)) which remains comparable to that of standard PMMA. Such major contrast enhancement shows that the above organic/inorganic nanocomposites are promising candidates for sub-100 nm lithography. (C) 2000 American Vacuum Society. [S0734-211X(00)05101-5].
引用
收藏
页码:325 / 327
页数:3
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