Temperature dependence of period of step wandering formed on Si(111) vicinal surfaces by DC heating

被引：10

作者：

Degawa, M ^{[1
]}

Minoda, H ^{[1
]}

Tanishiro, Y ^{[1
]}

Yagi, K ^{[1
]}

机构：

[1] Tokyo Inst Technol, Dept Phys, Tokyo 1528551, Japan

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 1999年 / 11卷 / 48期

关键词：

D O I：

10.1088/0953-8984/11/48/105

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Wandering of an army of steps in phase on Si(111) vicinal surfaces (5 degrees off toward the [11 (2) over bar] direction) formed by DC heating at temperatures 1000 < T < 1180 degrees C was studied. Periods of the step wandering formed on step-down current regions depended on the temperature and had a maximum at around 1100 degrees C. This also supports the view that the wandering is due to the DC heating effect. The periods were also measured for the step wandering of anti-bands on terraces between step bands formed by DC heating with a step-up current and we found that the periods were appreciably smaller than that in the step-down current regions.

引用

页码：L551 / L556

页数：6

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