Diode side-pumped actively Q-switched Nd:YAG/SrWO4 Raman laser with high average output power of over 10 W at 1180

被引：33

作者：

Chen, X. H. ^{[1
]}

Zhang, X. Y. ^{[1
]}

Wang, Q. P. ^{[1
]}

Li, P. ^{[1
]}

Li, S. T. ^{[1
]}

Cong, Z. H. ^{[1
]}

Liu, Z. J. ^{[1
]}

Fan, S. Z. ^{[1
]}

Zhang, H. J. ^{[2
]}

机构：

[1] Shandong Univ, Sch Informat Sci & Engn, Jinan 250100, Peoples R China

[2] Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China

来源：

LASER PHYSICS LETTERS | 2009年 / 6卷 / 05期

基金：

美国国家科学基金会;

关键词：

diode-pumped lasers; Raman lasers; Q-switching; SOLID-STATE; MICROCHIP LASER; ND; EFFICIENT; SCATTERING; CRYSTALS; TUNGSTATE; ND-SRWO4;

D O I：

10.1002/lapl.200810142

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A diode-side-pumped actively Q-switched Nd:YAG/SrWO4 intracavity Raman laser has been demonstrated, in which a Nd:YAG module is used as the fundamental laser source and a SrWO4 crystal is used as the Raman active medium to generate first-Stokes laser at 1180 nm. A convex-plane cavity is employed to make the laser in a stable and efficient work under high pump power. At a LD pump power of 164 W and a pulse repetition frequency of 20 kHz, an average output power of 10.5 W at 1180 nm is obtained.

引用

页码：363 / 366

页数：4

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