Effects of chemical composition on the optical properties of Znl1-xCdxO thin films

被引：57

作者：

Lee, SY ^{[1
]}

Li, Y

Lee, JS

Lee, JK

Nastasi, M

Crooker, SA

Jia, QX

Kang, HS

Kang, JS

机构：

[1] Yonsei Univ, Dept Elect & Elect Engn, Seoul 120749, South Korea

[2] Los Alamos Natl Lab, Div Mat Sci & Technol, Los Alamos, NM 87545 USA

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 02期

关键词：

D O I：

10.1063/1.1771810

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Zn1-xCdxO thin films were deposited on (0001) sapphire substrates by pulsed-laser deposition. Structural and optical properties of Zn1-xCdxO films were strongly correlated to the processing conditions. The composition of the films varied nonmonotonically as a function of deposition temperatures due to the difference of vapor pressure between Cd and Zn species. The optical energy bandgap of Zn1-xCdxO thin films, measured by photoluminescence and transmittance, changed from 3.249 to 3.291 eV. The change of the optical properties was mainly attributed to the change of the stoichiometry of Zn1-xCdxO, as determined by Rutherford backscattering spectroscopy. (C) 2004 American Institute of Physics.

引用

页码：218 / 220

页数：3

共 14 条

[1]

[Anonymous], 1997, BLUE LASER DIODE GAN, DOI DOI 10.1007/978-3-662-03462-0

[2] Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[3] Luminescence and nonradiative deactivation of excited states involving oxygen defect centers in polycrystalline ZnO [J].

Egelhaaf, HJ ;

Oelkrug, D .

JOURNAL OF CRYSTAL GROWTH, 1996, 161 (1-4) :190-194

[4]

HONIG RE, 1969, RCA REV, V30, P285

[5] Relationship between photoluminescence and electrical properties of ZnO thin films grown by pulsed laser deposition [J].

Jin, BJ ;

Woo, HS ;

Im, S ;

Bae, SH ;

Lee, SY .

APPLIED SURFACE SCIENCE, 2001, 169 :521-524

[6] Green luminescent center in undoped zinc oxide films deposited on silicon substrates [J].

Lin, BX ;

Fu, ZX ;

Jia, YB .

APPLIED PHYSICS LETTERS, 2001, 79 (07) :943-945

[7] Recent advances in ZnO materials and devices [J].

Look, DC .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 2001, 80 (1-3) :383-387

[8] Current injection emission from a transparent p-n junction composed of p-SrCu2O2/n-ZnO [J].

Ohta, H ;

Kawamura, K ;

Orita, M ;

Hirano, M ;

Sarukura, N ;

Hosono, H .

APPLIED PHYSICS LETTERS, 2000, 77 (04) :475-477

[9]

Pankove J., 1975, OPTICAL PROCESSES SE

[10] Optically pumped ultraviolet lasing from ZnO [J].

Reynolds, DC ;

Look, DC ;

Jogai, B .

SOLID STATE COMMUNICATIONS, 1996, 99 (12) :873-875

← 1 2 →