Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress

被引:52
作者
Pavesi, M
Manfredi, M
Salviati, G
Armani, N
Rossi, F
Meneghesso, G
Levada, S
Zanoni, E
Du, S
Eliashevich, I
机构
[1] Univ Parma, Dept Phys, I-43100 Parma, Italy
[2] Univ Parma, INFM, I-43100 Parma, Italy
[3] IMEM CNR Inst, I-43010 Parma, Italy
[4] Univ Padua, Dept Informat Engn, I-35131 Padua, Italy
[5] Univ Padua, INFM, I-35131 Padua, Italy
[6] GELcore LLC, Valley View, OH 44125 USA
关键词
D O I
10.1063/1.1734682
中图分类号
O59 [应用物理学];
学科分类号
摘要
The optical properties of blue InGaN-based light-emitting diodes aged at high current levels have been studied by electroluminescence and cathodoluminescence. The onset of a broad optical band peaked at about 3.1 eV in devices aged without a heat sink (junction temperature higher than 300 degreesC) has been correlated to an electrothermal threshold effect. The band is attributed to the dissociation of Mg-H complexes inside the p-type layers and to the consequent formation of Mg-related metastable complexes acting as acceptors. Subsequent electron-beam irradiation determines the almost complete quenching of the band. (C) 2004 American Institute of Physics.
引用
收藏
页码:3403 / 3405
页数:3
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