Chemisorption of NH3 on GaN(0001)-(1 x 1)

被引：41

作者：

Bermudez, VM ^{[1
]}

机构：

[1] USN, Res Lab, Washington, DC 20375 USA

来源：

CHEMICAL PHYSICS LETTERS | 2000年 / 317卷 / 3-5期

关键词：

D O I：

10.1016/S0009-2614(99)01404-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The chemisorption of MH, on the GaN(0001)-(1 X 1) surface has been studied using ultraviolet photoemission spectroscopy together with semiempirical molecular orbital cluster calculations. Adsorption removes surface states near the valence band maximum with little or no change in band bending. The data indicate a much smaller emission intensity for the N lone-pair orbital than is expected for an -NH2 species with three-fold coordinated N. Comparison of observed and calculated spectra suggests that NH3 dissociates into chemisorbed NH2 and H, with the N atom four-fold coordinated as an asymmetric bridge between two surface Ga atoms. (C) 2000 Elsevier Science B.V. All rights reserved.

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页码：290 / 295

页数：6

相关论文

共 31 条

[1] Surface composition and structure of GaN epilayers on sapphire [J].

Ahn, J ;

Sung, MM ;

Rabalais, JW ;

Koleske, DD ;

Wickenden, AE .

JOURNAL OF CHEMICAL PHYSICS, 1997, 107 (22) :9577-9584

[2]

BARTRAM ME, 1999, MRS INTERNET J NITRI, V4

[3] HREELS of H/GaN(0001): evidence for Ga termination [J].

Bellitto, VJ ;

Thoms, BD ;

Koleske, DD ;

Wickenden, AE ;

Henry, RL .

SURFACE SCIENCE, 1999, 430 (1-3) :80-88

[4] Study of oxygen chemisorption on the GaN(0001)-(1x1) surface [J].

Bermudez, VM .

JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :1190-1200

[5] The dependence of the structure and electronic properties of wurtzite GaN surfaces on the method of preparation [J].

Bermudez, VM ;

Koleske, DD ;

Wickenden, AE .

APPLIED SURFACE SCIENCE, 1998, 126 (1-2) :69-82

[6]

BERMUDEZ VM, IN PRESS SURF SCI

[7] UPS DIFFERENTIATION BETWEEN MOLECULAR NH3 AND PARTIALLY DISSOCIATED NH2 FRAGMENTS ADSORBED AT LOW-TEMPERATURE ON SI(001) SURFACES [J].

BISCHOFF, JL ;

LUTZ, F ;

BOLMONT, D ;

KUBLER, L .

SURFACE SCIENCE, 1991, 248 (1-2) :L240-L244

[8] A PHOTOEMISSION-STUDY OF AMMONIA ADSORPTION ON SI(100)2X1 AND SI(111)2X1 SURFACES [J].

BISCHOFF, JL ;

KUBLER, L ;

BOLMONT, D ;

SEBENNE, CA ;

LACHARME, JP ;

BONNET, JE ;

HRICOVINI, K .

SURFACE SCIENCE, 1993, 293 (1-2) :35-40

[9] Observation of highly dispersive surface states on GaN(0001)1x1 [J].

Chao, YC ;

Stagarescu, CB ;

Downes, JE ;

Ryan, P ;

Smith, KE ;

Hanser, D ;

Bremser, MD ;

Davis, RF .

PHYSICAL REVIEW B, 1999, 59 (24) :R15586-R15589

[10] HYDROGEN DESORPTION AND AMMONIA ADSORPTION ON POLYCRYSTALLINE GAN SURFACES [J].

CHIANG, CM ;

GATES, SM ;

BENSAOULA, A ;

SCHULTZ, JA .

CHEMICAL PHYSICS LETTERS, 1995, 246 (03) :275-278

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