Selective area epitaxy of GaN for electron field emission devices

被引：40

作者：

Kapolnek, D ^{[1
]}

Underwood, RD ^{[1
]}

Keller, BP ^{[1
]}

Keller, S ^{[1
]}

Denbaars, SP ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

JOURNAL OF CRYSTAL GROWTH | 1997年 / 170卷 / 1-4期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1016/S0022-0248(96)00620-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Selective area epitaxy of GaN by MOCVD has been used to fabricate arrays of hexagonal pyramid structures for electron field emission devices. The reactor temperature and pressure have been found to strongly affect the resulting pyramid morphology. Growth at 76 Torr results in improved pyramid shape and uniformity compared to growth at atmospheric pressure. Optimized arrays of pyramids produced emission currents of 80 mu A at 1100 V, when biased across 0.5 mm in UHV.

引用

页码：340 / 343

页数：4

共 4 条

[1] SELECTIVE GROWTH OF WURTZITE GAN AND ALXGA1-XN ON GAN SAPPHIRE SUBSTRATES BY METALORGANIC VAPOR-PHASE EPITAXY
KATO, Y
KITAMURA, S
HIRAMATSU, K
SAWAKI, N
[J]. JOURNAL OF CRYSTAL GROWTH, 1994, 144 (3-4) : 133 - 140
[2] METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF HIGH OPTICAL-QUALITY AND HIGH-MOBILITY GAN
KELLER, BP
KELLER, S
KAPOLNEK, D
JIANG, WN
WU, YF
MASUI, H
WU, X
HEYING, B
SPECK, JS
MISHRA, UK
DENBAARS, SP
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (11) : 1707 - 1709
[3] FABRICATION OF GAN HEXAGONAL PYRAMIDS ON DOT-PATTERNED GAN/SAPPHIRE SUBSTRATES VIA SELECTIVE METALORGANIC VAPOR-PHASE EPITAXY
KITAMURA, S
HIRAMATSU, K
SAWAKI, N
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1995, 34 (9B): : L1184 - L1186
[4] UNDERWOOD RP, UNPUB

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