Vesicle adsorption on SiO2 and TiO2:: Dependence on vesicle size

被引:235
作者
Reimhult, E [1 ]
Höök, F [1 ]
Kasemo, B [1 ]
机构
[1] Chalmers, Dept Appl Phys, S-41296 Gothenburg, Sweden
关键词
D O I
10.1063/1.1515320
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Kinetics of vesicle adsorption on SiO2 and TiO2 surfaces was investigated for vesicle sizes from 25 to 200 nm. On SiO2, nonruptured vesicles are adsorbed up to a critical coverage, Theta(c), after which spontaneous rupture and bilayer formation occurs in qualitatively the same manner for all vesicle sizes. On TiO2, adsorption of nonruptured vesicles continues up to saturation. A comparison between the kinetics at low coverages on SiO2 and TiO2, where intact vesicles adsorb on both surfaces, reveals that the vesicles on SiO2 are more flattened than nonruptured vesicles adsorbed on TiO2, indicating a stronger vesicle-surface interaction on SiO2. (C) 2002 American Institute of Physics.
引用
收藏
页码:7401 / 7404
页数:4
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