Tantalum carbide ohmic contacts to n-type silicon carbide

被引：34

作者：

Jang, T ^{[1
]}

Porter, LM

Rutsch, GWM

Odekirk, B

机构：

[1] Carnegie Mellon Univ, Dept Mat Sci & Engn, Pittsburgh, PA 15213 USA

[2] Univ Pittsburgh, Dept Phys, Pittsburgh, PA 15260 USA

[3] 3C Semicond Corp, Portland, OR 97201 USA

来源：

APPLIED PHYSICS LETTERS | 1999年 / 75卷 / 25期

关键词：

D O I：

10.1063/1.125506

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Tantalum carbide contacts with and without Au, Pt, and W/WC overlayers on n-type 6H-SiC (0001) were ohmic after annealing at temperatures between 800 and 1075 degrees C. Specific contact resistivities (SCRs) were calculated from current-voltage measurements of transmission line model patterns at temperatures ranging from 20 to 400 degrees C in air. The minimum SCRs at room temperature on SiC (2.3x10(19) cm(-3)) for TaC and for TaC with Pt and Au overlayers were 2.1x10(-5), 7.4x10(-6), and 1.4x10(-6) Omega cm(2), respectively. The SCRs for both the Au/TaC/SiC (5.3x10(-7)Omega cm(2)) and the Pt/TaC/SiC (7.5x10(-7) Omega cm(2)) samples decreased with measurement temperature to 200 and 400 degrees C, respectively, while the latter samples showed reversibility after heating to 400 degrees C. W/WC/TaC/SiC samples showed the best stability after annealing at 400 degrees C for 144 h in vacuum. Changes in the electrical characteristics were correlated with increases in O incorporation in the contacts as a result of annealing. Investigation of the TaC/SiC interface by transmission electron microscopy indicated that there was little or no reaction between the materials. (C) 1999 American Institute of Physics. [S0003-6951(99)00551-3].

引用

页码：3956 / 3958

页数：3

共 11 条

[1] THIN-FILM TI/6H-SIC INTERFACIAL REACTION - HIGH-SPATIAL-RESOLUTION ELECTRON-MICROSCOPY STUDY [J].

BOW, JS ;

PORTER, LM ;

KIM, MJ ;

CARPENTER, RW ;

DAVIS, RF .

ULTRAMICROSCOPY, 1993, 52 (3-4) :289-296

[2] REACTION OF TA THIN-FILM WITH SINGLE-CRYSTALLINE (001) BETA-SIC [J].

CHEN, JS ;

KOLAWA, E ;

NICOLET, MA ;

RUIZ, RP ;

BAUD, L ;

JAUSSAUD, C ;

MADAR, R .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (04) :2169-2175

[3]

Crofton J, 1997, PHYS STATUS SOLIDI B, V202, P581, DOI 10.1002/1521-3951(199707)202:1<581::AID-PSSB581>3.0.CO

[4]

2-M

[5]

Fomenko V.S., 1966, HDB THERMIONIC PROPE

[6] High temperature ohmic contacts to 3C-silicon carbide films [J].

Jacob, C ;

Pirouz, P ;

Kuo, HI ;

Mehregany, M .

SOLID-STATE ELECTRONICS, 1998, 42 (12) :2329-2334

[7] Electrical characteristics of tantalum and tantalum carbide Schottky diodes on n- and p-type silicon carbide as a function of temperature [J].

Jang, T ;

Porter, LM .

1998 FOURTH INTERNATIONAL HIGH TEMPERATURE ELECTRONICS CONFERENCE, 1998, :280-286

[8] Thermostable Ti/Au/Pt/Ti Schottky contacts to n-type 4H-SiC [J].

Kassamakova, L ;

Kakanakova-Georgieva, A ;

Kakanakov, R ;

Marinova, T ;

Kassamakov, I ;

Djambova, T ;

Noblanc, O ;

Arnodo, C ;

Cassette, S ;

Brylinski, C .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1998, 13 (09) :1025-1030

[9] CHEMISTRY, MICROSTRUCTURE, AND ELECTRICAL-PROPERTIES AT INTERFACES BETWEEN THIN-FILMS OF COBALT AND ALPHA-(6H) SILICON CARBIDE-(0001) [J].

PORTER, LM ;

DAVIS, RF ;

BOW, JS ;

KIM, MJ ;

CARPENTER, RW .

JOURNAL OF MATERIALS RESEARCH, 1995, 10 (01) :26-33

[10] A CRITICAL-REVIEW OF OHMIC AND RECTIFYING CONTACTS FOR SILICON-CARBIDE [J].

PORTER, LM ;

DAVIS, RF .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 34 (2-3) :83-105

← 1 2 →