Production and characterization of boron- and silicon-doped carbon clusters

被引：151

作者：

Kimura, T

Sugai, T

Shinohara, H

机构：

[1] Department of Chemistry, Nagoya University

来源：

CHEMICAL PHYSICS LETTERS | 1996年 / 256卷 / 03期

关键词：

D O I：

10.1016/0009-2614(96)00436-8

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Boron- and silicon-doped carbon clusters of the type BmCn (m = 1-4) and SimCn (m = 1, 2) have been produced via the laser-vaporization cluster beam technique. The observed features of the intensity distribution in mass spectra suggest that B atoms can be incorporated into the clusters with much higher efficiency than Si atoms. The mass spectral evidence is also consistent with the idea that SiCn(n greater than or equal to 30) and BCn(n greater than or equal to 30) clusters have a silicon- and boron-heterofullerene structure, respectively.

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页码：269 / 273

页数：5

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