Energetics of metal-organic interfaces: New experiments and assessment of the field

被引:535
作者
Hwang, Jaehyung [1 ]
Wan, Alan [1 ]
Kahn, Antoine [1 ]
机构
[1] Princeton Univ, Dept Elect Engn, Princeton, NJ 08544 USA
基金
美国国家科学基金会;
关键词
Organic-metal interfaces; Molecular level alignment; Photoelectron spectroscopy; ENERGY-LEVEL ALIGNMENT; ELECTRONIC-STRUCTURE; HIGH-RESOLUTION; SURFACE PHOTOVOLTAGE; SCHOTTKY-BARRIER; THIN-FILMS; LARGE-AREA; SYNCHROTRON-RADIATION; ELECTRICAL-PROPERTIES; INJECTION BARRIER;
D O I
10.1016/j.mser.2008.12.001
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Considerable research and development means have been focused in the past decade on organic semiconductor thin films and devices with applications to full color displays, flexible electronics and photovoltaics. Critical areas of these thin films are their interfaces with electrodes, with other organic films and with dielectrics, as these interfaces control charge injection and transport through the device. Full understanding of the mechanisms that determine the electronic properties of these interfaces, i.e. the relative position of molecular levels and charge carrier transport states, is an important goal to reach for developing reliable device processing conditions. This report provides an extensive, although probably somewhat biased, review of polymer- and small molecule-metal interface work of the past few years, with emphasis placed specifically on (i) the electronic structure and molecular level alignment at these interfaces, (ii) the perceived differences between small molecule and polymer interfaces, (iii) the difference between organic-on-metal and metal-on-organic interfaces, and (iv) the role played by electrode surface contamination in establishing interface energetics. Environmental conditions, e.g. vacuum vs. ambient, are found to be critical parameters in the processing of polymer and small molecule interfaces with metals. With similar processing conditions, these two types of interfaces are found to obey very similar molecular level alignment rules. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1 / 31
页数:31
相关论文
共 160 条
  • [1] Nearly 100% internal phosphorescence efficiency in an organic light-emitting device
    Adachi, C
    Baldo, MA
    Thompson, ME
    Forrest, SR
    [J]. JOURNAL OF APPLIED PHYSICS, 2001, 90 (10) : 5048 - 5051
  • [2] New charge-carrier blocking materials for high efficiency OLEDs
    Adamovich, VI
    Cordero, SR
    Djurovich, PI
    Tamayo, A
    Thompson, ME
    D'Andrade, BW
    Forrest, SR
    [J]. ORGANIC ELECTRONICS, 2003, 4 (2-3) : 77 - 87
  • [3] SURFACE PHOTOVOLTAGE EFFECTS IN PHOTOEMISSION FROM METAL-GAP(110) INTERFACES - IMPORTANCE FOR BAND-BENDING EVALUATION
    ALONSO, M
    CIMINO, R
    HORN, K
    [J]. PHYSICAL REVIEW LETTERS, 1990, 64 (16) : 1947 - 1950
  • [4] Andrews P.T., 1992, Unoccupied Electronic States: Fundamentals for XANES, EELS, IPS and BIS
  • [5] [Anonymous], 1993, Semiconductor Surfaces and Interfaces
  • [6] Influence of film morphology on the vibrational spectra of dioctyl substituted polyfluorene (PFO)
    Ariu, M
    Lidzey, DG
    Bradley, DDC
    [J]. SYNTHETIC METALS, 2000, 111 : 607 - 610
  • [7] Laser direct-write processing
    Arnold, Craig B.
    Pique, Alberto
    [J]. MRS BULLETIN, 2007, 32 (01) : 9 - 12
  • [8] Aschcroft N., 1976, Solid State Physics
  • [9] Avci R., 1989, Review of Scientific Instruments, V60, P3643, DOI 10.1063/1.1140469
  • [10] Exchangelike effects for closed-shell adsorbates:: Interface dipole and work function -: art. no. 096104
    Bagus, PS
    Staemmler, V
    Wöll, C
    [J]. PHYSICAL REVIEW LETTERS, 2002, 89 (09) : 961041 - 961044