Mn-doping-induced itinerant-electron ferromagnetism in Cr2GeC

被引：85

作者：

Liu, Z. ^{[1
]}

Waki, T. ^{[1
]}

Tabata, Y. ^{[1
]}

Nakamura, H. ^{[1
]}

机构：

[1] Kyoto Univ, Dept Mat Sci & Engn, Kyoto 6068501, Japan

来源：

PHYSICAL REVIEW B | 2014年 / 89卷 / 05期

关键词：

M(N+1)AX(N) PHASES; MAX PHASES; CR; NB; TA;

D O I：

10.1103/PhysRevB.89.054435

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The magnetism of the M(n+1)AX(n) phase, Cr2GeC, and its Mn-doped system, (Cr1-xMnx)(2)GeC (x <= 0.25), synthesized via a solid state reaction, was investigated systematically. Cr2GeC is in a spin-unpolarized state, but the ferromagnetic band polarization is induced immediately by the Mn doping. The Curie temperature, T-C, and the spontaneous moment, p(s), increase almost proportionally to the Mn concentration, strongly suggesting that Cr2GeC is located in the vicinity of a ferromagnetic quantum critical point. The strong concentration dependence of p(eff)/p(s), where p(eff) is the effective moment in the paramagnetic state, indicates that the ferromagnetism appearing in the Mn-doped (CrGeC)-Ge-2 can be classified as a typical itinerant-electron ferromagnetism in a wide range of the degree of electron localization.

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页数：6

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