Selective-area regrowth of GaN field emission tips

被引：49

作者：

Underwood, RD ^{[1
]}

Kapolnek, D ^{[1
]}

Keller, BP ^{[1
]}

Keller, S ^{[1
]}

Denbaars, SP ^{[1
]}

Mishra, UK ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT,SANTA BARBARA,CA 93106

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 02期

关键词：

D O I：

10.1016/S0038-1101(96)00209-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Field emission current has been observed for the first time from GaN. Single-crystal GaN pyramids were grown in arrays by selective-area metalorganic chemical vapor deposition (MOCVD) on GaN thin films using a dielectric mask. GaN does not deposit on the dielectric mask and growth of hexagonal pyramid structures occurs only in mask openings. The pyramids were biased negatively with respect to a metal anode and an emission current of 0.8 mu A at 2000 V was observed. (C) 1997 Elsevier Science Ltd.

引用

页码：243 / 245

页数：3

共 7 条

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