Energy band alignment at the (100)Ge/HfO2 interface

被引:104
作者
Afanas'ev, VV [1 ]
Stesmans, S [1 ]
机构
[1] Univ Leuven, Dept Phys, B-3001 Louvain, Belgium
关键词
D O I
10.1063/1.1688453
中图分类号
O59 [应用物理学];
学科分类号
摘要
The Ge/HfO2 interface band diagram was directly determined using internal photoemission of electrons and holes from Ge into the Hf oxide. The inferred offsets of the conduction and valence band at the interface, 2.0 +/- 0.1 and 3.0 +/- 0.1 eV; respectively, suggest the possibility to apply the deposited HfO2 as an insulator on Ge. The post-deposition annealing of the Ge/HfO2 structures in oxygen results in similar to1 eV reduction of the valence band offset attributed to the growth of GeO2 interlayer. (C) 2004 American Institute of Physics.
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页码:2319 / 2321
页数:3
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