High quality conductive gallium-doped zinc oxide films deposited at room temperature

被引：97

作者：

Fortunato, E ^{[1
]}

Assunçao, V

Gonçalves, A

Marques, A

Aguas, H

Pereira, L

Ferreira, I

Vilarinho, P

Martins, R

机构：

[1] Univ Nova Lisboa, Fac Sci & Technol, Dept Mat Sci CENIMAT, P-2829516 Caparica, Portugal

[2] Univ Nova Lisboa, CEMOP, P-2829516 Caparica, Portugal

[3] Univ Aveiro, CICECO, Dept Ceram & Glass Engn, P-3810193 Aveiro, Portugal

来源：

THIN SOLID FILMS | 2004年 / 451卷

关键词：

gallium; zinc oxide; thin film; rf magnetron sputtering; transparent conductive oxide;

D O I：

10.1016/j.tsf.2003.10.139

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Transparent and highly conducting gallium-doped zinc oxide films were successfully deposited by if sputtering at room temperature. The lowest resistivity achieved was 2.6 X 10(-4) Omega cm for a thickness of 1100 nm (sheet resistance approximate to 1.6 Omega /sq), with a Hall mobility of 18 cm(2)/Vs and a carrier concentration of 1.3 X 10(21) cm(-3). The films are polycrystalline with a hexagonal structure and a strongly preferred orientation along the c-axis. A linear dependence between the mobility and the crystallite size was obtained. The films present a transmittance in the visible spectra between 80 and 90% and a refractive index of approximately 2. which is very close to the value reported for bulk material. (C) 2003 Elsevier B.V. All rights reserved.

引用

页码：443 / 447

页数：5

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