Surface-plasmon-enhanced light emitters based on InGaN quantum wells

被引：1360

作者：

Okamoto, K

Niki, I

Shvartser, A

Narukawa, Y

Mukai, T

Scherer, A ^{[1
]}

机构：

[1] CALTECH, Dept Elect Engn, Pasadena, CA 91125 USA

[2] Nichia Corp, Nitride Semicond Res Lab, Tokushima 7748601, Japan

来源：

NATURE MATERIALS | 2004年 / 3卷 / 09期

关键词：

D O I：

10.1038/nmat1198

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The surface-plasmon-enhanced light emitters based on indium gallium nitride quantum wells are discussed. The surface plasmons (SP) can increase the density of states and the spontaneous emisson rate in the semiconductors. Large enhancement of the internal quantum efficiencies are measured when silver or aluminium layers are deposited 10 nm above InGaN light emitting layer. The result shows that the use of SPs leads to a new class of very bright LEDs and highly efficient solid-state light sources.

引用

页码：601 / 605

页数：5

共 27 条

[1]

[Anonymous], 1997, BLUE LASER DIODE GAN, DOI DOI 10.1007/978-3-662-03462-0

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