Crystal growth of REMn2Si2 (RE = Y, Er) by a Pb flux method

被引:6
作者
Okada, S
Ogawa, M
Shishido, T
Iizumi, K
Kudou, K
Kanari, H
Nakajima, K
Rogl, P
机构
[1] Kokushikan Univ, Fac Engn, Tokyo 1548515, Japan
[2] Tokyo Inst Polytech, Fac Engn, Atsugi, Kanagawa 2430297, Japan
[3] Tohoku Univ, Inst Mat Res, Sendai, Miyagi 9800812, Japan
[4] Kanagawa Univ, Fac Engn, Yokohama, Kanagawa 2218686, Japan
[5] Univ Vienna, Inst Phys Chem, A-1090 Vienna, Austria
关键词
crystal morphology; growth from high temperature solutions; single crystal growth;
D O I
10.1016/S0022-0248(02)00842-4
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
Single crystals of REMn2Si2 (RE: Y, Er) (tetragonal, S.G.: 14/mmm) were grown from a high-temperature lead metal flux by slowly cooling the melt under an argon atmosphere. The growth conditions for large crystals were established. The YMn2Si2 and ErMn2Si2 single crystals, having silver-gray and metallic luster, were obtained as thin plates with well-developed (0 0 1) faces. The largest crystals have maximum dimensions of about 2 x 2 x 0.02 mm(3). As-grown YMn2Si2 and ErMn2Si2 single crystals were subjected to chemical analyses and measurements of the unit cell parameters. The results areas follows: for Y0.88Mn1.81Si2 a = 0.3922(1)nm, c = 1.0451(1)nm, V = 160.8(1) x 10(-3) nm(3): for Er0.86Mn2.12Si2, a = 0.3896(1) nm, c = 1.0415(3)nm, V = 158.1(1) x 10(-3) nm(3). (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:617 / 620
页数:4
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