New silicon micromachining techniques for microsystems

被引：21

作者：

French, PJ ^{[1
]}

Gennissen, PTJ ^{[1
]}

Sarro, PM ^{[1
]}

机构：

[1] DELFT UNIV TECHNOL, DIMES, FAC ELECT ENGN, LAB ELECT COMPONENTS TECHNOL & MAT, NL-2600 GA DELFT, NETHERLANDS

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 1997年 / 62卷 / 1-3期

关键词：

epi-micromachining; micromachining; microstructures; silicon;

D O I：

10.1016/S0924-4247(97)01502-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Traditionally there have been two types of micromachining, bulk and surface micromachining. More recently a modification to the bulk-micromachining technique, where the micromachining is performed in the top few microns of the substrate, has been receiving attention. Many of these techniques may also be called epi-micromachining, since the mechanical devices are often formed in the epilayer. They have many of the advantages of both bulk and surface micromachining without the disadvantages. Structures fabricated using these new technologies may have lateral dimensions similar to those of surface micromachining but with a considerably increased vertical dimension. In this paper the development of these silicon micromachining techniques is discussed along with the compatibility issues. (C) 1997 Elsevier Science S.A.

引用

页码：652 / 662

页数：11

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