Silicon dioxide deposition in a microwave plasma reactor

被引：55

作者：

Benissad, N

Boisse-Laporte, C

Vallée, C

Granier, A

Goullet, A

机构：

[1] Univ Paris 11, Phys Gaz & Plasmas Lab, F-91405 Orsay, France

[2] Inst Mat Nantes, Lab Plasmas & Couches Minces, F-44072 Nantes, France

来源：

SURFACE & COATINGS TECHNOLOGY | 1999年 / 116卷

关键词：

emission spectroscopy; film structure; HMDSO; microwave plasma; SiO(2) deposition;

D O I：

10.1016/S0257-8972(99)00264-9

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

SiO(x)C(y)H(z) films were deposited using hexamethyldisiloxane (HMDSO) in a 2.45 GHz microwave plasma reactor. The plasma was characterised by optical emission spectroscopy as a function of the HMDSO-to-oxygen ratio. The emission of species resulting from the dissociation and recombination of the monomer was identified. The film structure was investigated by means of FTIR spectroscopy and ellipsometry was used to determine the thickness and refractive index of the layer. The infrared spectrum and the deposition rate are strongly dependent on the HMDSO-to-O(2) ratio, whereas the refractive index is quite constant and lower than expected. (C) 1999 Elsevier Science S.A. All rights reserved.

引用

页码：868 / 873

页数：6

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