Photoelectrochemical characterisation of indium nitride and tin nitride in aqueous solution

被引：53

作者：

Lindgren, T ^{[1
]}

Larsson, M ^{[1
]}

Lindquist, SE ^{[1
]}

机构：

[1] Univ Uppsala, Dept Chem Phys, S-75121 Uppsala, Sweden

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2002年 / 73卷 / 04期

关键词：

indium nitride; tin nitride; thin film; photoelectrochemistry; aqueous solution;

D O I：

10.1016/S0927-0248(02)00206-4

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Indium nitride (InN) and tin nitride (SnNx) films were produced with reactive d.c. magnetron sputtering technique. The thin film semiconductors were optically and photoelectrochemically characterised and the energetic positions of the two semiconductors' band edges were determined with respect to the normal hydrogen electrode. The sputtered InN thin film showed an indirect bandgap of 1.4 eV and a direct bandgap of 1.8 eV. The optical spectra of SnNx indicated a bandgap energy of approximately 1.4 eV. All nitride films showed n-type photoresponse in KI (aq) electrolyte at an irradiation intensity of 1000 W/m(2). The photoelectrochemical characterisation indicated that InN and SnNx with a bias of about 400 mV or less can be used for photo-oxidation of water. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：377 / 389

页数：13

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