New technique for the measurement of the static and of the transient junction temperature in IGBT devices under operating conditions

A novel technique is presented, which uses dI(ce)/dt and the transconductance as a thermo-sensitive parameter for the measurement of the static and of the transient average junction temperature in IGBT devices. The paper describes the physics of the signal generation, provides the experimental setup, and discusses the accuracy and the suitability of the technique under operating conditions of the devices.