Carbon and germanium distributions in Si1-x-yGexCy layers epitaxially grown on Si(001) by RTCVD

被引:15
作者
Guedj, C
Portier, X
Hairie, A
Bouchier, D
Calvarin, G
Piriou, B
机构
[1] INST ELECT FONDAMENTALE,CNRS,URA 22,F-91405 ORSAY,FRANCE
[2] INST SCI MAT & RAYONNEMENT,LERMAT,F-14050 CAEN,FRANCE
[3] ECOLE CENT PARIS,CHIM PHYS SOLIDE LAB,CNRS,URA 453,F-92295 CHATENAY MALABR,FRANCE
[4] ECOLE CENT PARIS,LAB PHYSICOCHIM MOL & MINERALE,CNRS,UPR 1907,F-92295 CHATENAY MALABR,FRANCE
关键词
carbon; germanium; epitaxy; chemical vapour deposition; silicon; X-ray diffraction; Raman spectroscopy;
D O I
10.1016/S0040-6090(96)09243-7
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Silicon germanium carbon with up to 1.5% of substitutional carbon can be grown epitaxially on Si(001) by rapid thermal chemical vapor deposition (RTCVD) using methylsilane as a precursor. The germanium and carbon atomic distributions are studied for a C-rich Si1-x-yGexCy heterostructure using high-resolution transmission electron microscopy (HREM), high-resolution X-ray diffraction and Raman spectrometry, HREM images show the formation of regularly spaced carbon-rich tilted sublattices and local germanium fluctuations. 2D reciprocal space mapping and Raman spectroscopy confirm this thin tilted sublayers formation. A new model for perpendicular lattice parameter reduction is proposed, The structure remains highly distorted and a statistical description of these strain fluctuations is exposed.
引用
收藏
页码:129 / 132
页数:4
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