Carbon and germanium distributions in Si1-x-yGexCy layers epitaxially grown on Si(001) by RTCVD

被引：15

作者：

Guedj, C

Portier, X

Hairie, A

Bouchier, D

Calvarin, G

Piriou, B

机构：

[1] INST ELECT FONDAMENTALE,CNRS,URA 22,F-91405 ORSAY,FRANCE

[2] INST SCI MAT & RAYONNEMENT,LERMAT,F-14050 CAEN,FRANCE

[3] ECOLE CENT PARIS,CHIM PHYS SOLIDE LAB,CNRS,URA 453,F-92295 CHATENAY MALABR,FRANCE

[4] ECOLE CENT PARIS,LAB PHYSICOCHIM MOL & MINERALE,CNRS,UPR 1907,F-92295 CHATENAY MALABR,FRANCE

来源：

THIN SOLID FILMS | 1997年 / 294卷 / 1-2期

关键词：

carbon; germanium; epitaxy; chemical vapour deposition; silicon; X-ray diffraction; Raman spectroscopy;

D O I：

10.1016/S0040-6090(96)09243-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Silicon germanium carbon with up to 1.5% of substitutional carbon can be grown epitaxially on Si(001) by rapid thermal chemical vapor deposition (RTCVD) using methylsilane as a precursor. The germanium and carbon atomic distributions are studied for a C-rich Si1-x-yGexCy heterostructure using high-resolution transmission electron microscopy (HREM), high-resolution X-ray diffraction and Raman spectrometry, HREM images show the formation of regularly spaced carbon-rich tilted sublattices and local germanium fluctuations. 2D reciprocal space mapping and Raman spectroscopy confirm this thin tilted sublayers formation. A new model for perpendicular lattice parameter reduction is proposed, The structure remains highly distorted and a statistical description of these strain fluctuations is exposed.

引用

页码：129 / 132

页数：4

共 24 条

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