Emission characteristics of photoconductive antennas based on low-temperature-grown GaAs and semi-insulating GaAs

被引：392

作者：

Tani, M ^{[1
]}

Matsuura, S ^{[1
]}

Sakai, K ^{[1
]}

Nakashima, S ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN,DEPT APPL PHYS,SUITA,OSAKA 565,JAPAN

来源：

APPLIED OPTICS | 1997年 / 36卷 / 30期

关键词：

photoconductive antenna; terahertz radiation; low-temperature-grown GaAs; semi-insulating GaAs; carrier-screening effect;

D O I：

10.1364/AO.36.007853

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Terahertz radiation was generated with several designs of photoconductive antennas (three dipoles, a bow tie, and a coplanar strip Line) fabricated on low-temperature-grown (LT) GaAs and semi-insulating (SI) GaAs, and the emission properties of the photoconductive antennas were compared with each other. The radiation spectrum of each antenna was characterized with the photoconductive sampling technique. The total radiation power was also measured by a bolometer for comparison of the relative radiation power. The radiation spectra of the LT-GaAs-based and SI-GaAs-based photoconductive antennas of the same design showed no significant difference. The pump-power dependencies of the radiation power showed saturation for higher pump intensities, which was more serious in SI-GaAs-based antennas than in LT-GaAs-based antennas. We attributed the origin of the saturation to the held screening of the photocarriers. (C) 1997 Optical Society of America.

引用

页码：7853 / 7859

页数：7

共 18 条

[1] PICOSECOND PHOTOCONDUCTING HERTZIAN DIPOLES [J].

AUSTON, DH ;

CHEUNG, KP ;

SMITH, PR .

APPLIED PHYSICS LETTERS, 1984, 45 (03) :284-286

[2] SCALING OF TERAHERTZ RADIATION FROM LARGE-APERTURE BIASED INP PHOTOCONDUCTORS [J].

BENICEWICZ, PK ;

TAYLOR, AJ .

OPTICS LETTERS, 1993, 18 (16) :1332-1334

[3] SATURATION PROPERTIES OF LARGE-APERTURE PHOTOCONDUCTING ANTENNAS [J].

DARROW, JT ;

ZHANG, XC ;

MORSE, JD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (06) :1607-1618

[4] OPTOELECTRONIC TRANSMISSION AND RECEPTION OF ULTRASHORT ELECTRICAL PULSES [J].

DEFONZO, AP ;

LUTZ, CR .

APPLIED PHYSICS LETTERS, 1987, 51 (04) :212-214

[5]

GRISCHKOWSKY D, 1991, OSA PROC, V9, P9

[6] FAR-INFRARED TIME-DOMAIN SPECTROSCOPY WITH TERAHERTZ BEAMS OF DIELECTRICS AND SEMICONDUCTORS [J].

GRISCHKOWSKY, D ;

KEIDING, S ;

VANEXTER, M ;

FATTINGER, C .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1990, 7 (10) :2006-2015

[7] ULTRAFAST CARRIER DYNAMICS IN III-V-SEMICONDUCTORS GROWN BY MOLECULAR-BEAM EPITAXY AT VERY LOW SUBSTRATE TEMPERATURES [J].

GUPTA, S ;

WHITAKER, JF ;

MOUROU, GA .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1992, 28 (10) :2464-2472

[8] COHERENT TRANSIENTS EXCITED BY SUBPICOSECOND PULSES OF TERAHERTZ RADIATION [J].

HARDE, H ;

GRISCHKOWSKY, D .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1991, 8 (08) :1642-1651

[9] EFFICIENT GENERATION OF 380 FS PULSES OF THZ RADIATION BY ULTRAFAST LASER-PULSE EXCITATION OF A BIASED METAL-SEMICONDUCTOR INTERFACE [J].

KATZENELLENBOGEN, N ;

GRISCHKOWSKY, D .

APPLIED PHYSICS LETTERS, 1991, 58 (03) :222-224

[10] MOLECULAR-BEAM EPITAXIAL GAAS GROWN AT LOW-TEMPERATURES [J].

LOOK, DC .

THIN SOLID FILMS, 1993, 231 (1-2) :61-73

← 1 2 →