Impact of the series resistance on the parameter extraction of submicron silicon metal-oxide-semiconductor transistors operated at 77 K

被引：8

作者：

Simoen, E

Claeys, C

机构：

[1] IMEC, Kapeldreef 75

来源：

SOLID-STATE ELECTRONICS | 1997年 / 41卷 / 04期

关键词：

D O I：

10.1016/S0038-1101(96)00225-0

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the impact of the series resistance on the parameter extraction of LDD n-MOSFETs operated at 77 K is investigated. More specifically, the applicability of the so-called universal empirical mobility law is critically studied. It is shown that this method fails if the series resistance shows a pronounced gate voltage dependence. However, a simple correction procedure is proposed which extends the method and enables a straightforward parameter extraction for MOSFETs at cryogenic temperatures. To that end, the series resistance in linear operation is derived by combining the total resistance of two transistors only; a long reference device and a shorter L-array transistor. (C) 1997 Elsevier Science Ltd.

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收藏

页码：659 / 661

页数：3

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