193-nm photoresists based on norbornene copolymers with derivatives of bile acid

被引：11

作者：

Kim, JB ^{[1
]}

Lee, BW ^{[1
]}

Yun, HJ ^{[1
]}

Kwon, YG ^{[1
]}

机构：

[1] Korea Adv Inst Sci & Technol, Dept Chem, Taejon 305701, South Korea

来源：

CHEMISTRY LETTERS | 2000年 / 04期

关键词：

D O I：

10.1246/cl.2000.414

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

We synthesized new chemically amplified photoresists for 193-nm lithography. Norbornene substituted with a derivative of bile acid was copolymerized with maleic anhydride by free radical polymerization. The resulting copolymers have good transmittance at 193 nm and possess excellent thermal stability up to 260 degrees C. With the standard developer, the resists formulated with the copolymers form 0.15-0.18 mu m patterns at doses of 6-7 mJ cm(-2) using an ArF excimer laser stepper.

引用

页码：414 / 415

页数：2

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