Effects of donor concentration and oxygen partial pressure on interface morphology and grain growth behavior in SrTiO3

被引:145
作者
Chung, SY [1 ]
Yoon, DY [1 ]
Kang, SJL [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Dept Mat Sci & Engn, Mat Interface Lab, Yusong Gu, Taejon 305701, South Korea
关键词
vacancy; interface grain growth; strontium titanate; roughening transition;
D O I
10.1016/S1359-6454(02)00139-8
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Change in interface morphology with ionic vacancy concentration and the correlation between interface structure and grain growth behavior in strontium titanate (SrTiO3) have been investigated using SrTiO3 single crystals and powder compacts. Under experimental conditions where SrTiO3 contains a negligible amount of ionic vacancies, the shape of the single crystal embedded in matrix grains was well faceted, showing a strong anisotropy in interfacial energy. However, as strontium or oxygen vacancies increased with the addition of an Nb2O5 donor dopant or reduction of oxygen partial pressure, the faceted shape changed to a smoothly curved rough one indicating that an interface roughening transition occurred and, as a result, the anisotropy in interfacial energy was considerably reduced. Grain growth behavior was also strongly dependent on the interface structures; while normal grain growth occurred when the interfaces were rough, abnormal grain growth behavior was observed in the samples with faceted interfaces. It appears, therefore, that the ionic vacancies in SrTiO3 can cause the interface roughening transition and change the resultant grain growth behavior. (C) 2002 Acta Materialia Inc. Published by Elsevier Science Ltd. All rights reserved.
引用
收藏
页码:3361 / 3371
页数:11
相关论文
共 40 条
[1]  
[Anonymous], 1987, CHEM PHYS SOLID SURF
[2]   ELECTRICAL-CONDUCTIVITY IN LANTHANUM-DOPED STRONTIUM-TITANATE [J].
BALACHANDRAN, U ;
EROR, NG .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (05) :1021-1026
[3]   DISLOCATIONS AS GROWTH STEP SOURCES IN SOLUTION GROWTH AND THEIR INFLUENCE ON INTERFACE STRUCTURES [J].
BAUSER, E ;
STRUNK, H .
THIN SOLID FILMS, 1982, 93 (1-2) :185-194
[4]   THE GROWTH OF CRYSTALS AND THE EQUILIBRIUM STRUCTURE OF THEIR SURFACES [J].
BURTON, WK ;
CABRERA, N ;
FRANK, FC .
PHILOSOPHICAL TRANSACTIONS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1951, 243 (866) :299-358
[5]   MOLECULAR MECHANISM OF SOLIDIFICATION [J].
CAHN, JW ;
HILLIG, WB ;
SEARS, GW .
ACTA METALLURGICA, 1964, 12 (12) :1421-+
[6]   COMPENSATING DEFECTS IN HIGHLY DONOR-DOPED BATIO3 [J].
CHAN, HM ;
HARMER, MP ;
SMYTH, DM .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1986, 69 (06) :507-510
[7]  
CHAN NH, 1984, J AM CERAM SOC, V67, P285, DOI 10.1111/j.1151-2916.1984.tb18849.x
[8]   NON-STOICHIOMETRY IN UNDOPED BATIO3 [J].
CHAN, NH ;
SHARMA, RK ;
SMYTH, DM .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1981, 64 (09) :556-562
[9]   NONSTOICHIOMETRY IN ACCEPTOR-DOPED BATIO3 [J].
CHAN, NH ;
SHARMA, RK ;
SMYTH, DM .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1982, 65 (03) :167-170
[10]   NON-STOICHIOMETRY IN SRTIO3 [J].
CHAN, NH ;
SHARMA, RK ;
SMYTH, DM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) :1762-1769