Effect of optical phonons on the spectral shape of terahertz quantum-well photodetectors

被引：6

作者：

Cao, J. C. ^{[1
]}

Chen, Y. L.

Liu, H. C.

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Beijing 100864, Peoples R China

[2] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada

来源：

SUPERLATTICES AND MICROSTRUCTURES | 2006年 / 40卷 / 02期

基金：

中国国家自然科学基金;

关键词：

terahertz; absorption coefficient; quantum-well photodetectors; optical phonons;

D O I：

10.1016/j.spmi.2006.06.001

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We calculate the spectral response of a terahertz (THz) quantum-well photodetector designed for 7 THz detection peak frequency. We incorporate the effect of GaAs optical phonons which give rise to a strong absorption in the region of 34-36 meV and result in an increase in reflection due to the large refractive index (n) change around this region. Comparing the calculated spectral shape with experiments, we show the improvement over the standard expressions. (c) 2006 Elsevier Ltd. All rights reserved.

引用

页码：119 / 124

页数：6

共 18 条

[1] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J].

BLAKEMORE, JS .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) :R123-R181

[2] Interband impact ionization and nonlinear absorption of terahertz radiation in semiconductor heterostructures [J].

Cao, JC .

PHYSICAL REVIEW LETTERS, 2003, 91 (23) :237401-237401

[3] INFRARED-ABSORPTION BANDS INDUCED BY SI-RELATED DEFECTS IN GAAS - ABSORPTION CROSS-SECTIONS [J].

CHEN, RT ;

RANA, V ;

SPITZER, WG .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (03) :1532-1538

[4] Analytical model of transient photoresponse of quantum well infrared photodetectors [J].

Ershov, M ;

Satou, S ;

Ikebe, Y .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (11) :6442-6450

[5] Terahertz range quantum well infrared photodetector [J].

Graf, M ;

Scalari, G ;

Hofstetter, D ;

Faist, J ;

Beere, H ;

Linfield, E ;

Ritchie, D ;

Davies, G .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :475-477

[6]

Helm M, 2000, SEMICONDUCT SEMIMET, V62, P1

[7] BOUND-FREE INTRABAND ABSORPTION IN GAAS-ALXGA1-XAS SEMICONDUCTOR QUANTUM WELLS [J].

IKONIC, Z ;

MILANOVIC, V ;

TJAPKIN, D .

APPLIED PHYSICS LETTERS, 1989, 54 (03) :247-249

[8] Physical model of quantum-well infrared photodetectors [J].

Jovanovic, VD ;

Harrison, P ;

Ikonic, Z ;

Indjin, D .

JOURNAL OF APPLIED PHYSICS, 2004, 96 (01) :269-272

[9]

KLINGSHIRM CF, 1997, SEMICONDUCTOR OPTICS

[10] QUANTUM-WELL INFRARED PHOTODETECTORS [J].

LEVINE, BF .

JOURNAL OF APPLIED PHYSICS, 1993, 74 (08) :R1-R81

← 1 2 →