Diffusion-induced islanding in heteroepitaxial systems

被引:4
作者
Dubrovskii, VG [1 ]
机构
[1] Sci Instruments PLC, St Petersburg 198103, Russia
关键词
kinetic model; heteroepitaxial system; islanding; self-organisation; diffusion; lateral interactions;
D O I
10.1016/S0378-4371(02)00551-4
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
A microscopic lattice gas model for ultra-thin film dynamics is developed and applied to the case of heteroepitaxial growth. A set of non-linear kinetic equations for average occupations of adsorption sites in 3D lattice is studied analytically in a continual limit. It is found that within a range of parameters of heteroepitaxial system space-uniform state becomes unstable in critical thickness range and System undergoes spontaneous islanding. Space-ordered quasistationary Solutions to the model equations describe the dynamics of 3D islanding induced by the uphill diffusion in the field of deposit-deposit and deposit-substrate interactions. Lateral size of islands depends on material constants of the system, surface temperature and deposition rate. Initial discrete system of non-linear kinetic equations is studied numerically; results for surface morphology describe dense arrays of 3D nanoislands. (C) 2002 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:192 / 208
页数:17
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