Mott-Hubbard insulators for systems with orbital degeneracy

被引：47

作者：

Gunnarsson, O ^{[1
]}

Koch, E ^{[1
]}

Martin, RM ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT PHYS,URBANA,IL 61801

来源：

PHYSICAL REVIEW B | 1997年 / 56卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.56.1146

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We study how the electron hopping reduces the Mott-Hubbard band gap in the limit of a large Coulomb interaction U and as a function of the orbital degeneracy N. The results support the conclusion that the hopping contribution grows as roughly root NW, where W is the one-particle bandwidth, but in certain models a crossover to an similar to NW behavior is found for sufficiently large N.

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页码：1146 / 1152

页数：7

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