Energy gap in the Kondo semiconductor CeRhAs

被引：14

作者：

Ekino, T ^{[1
]}

Takasaki, T

Suemitsu, T

Takabatake, T

Fujii, H

机构：

[1] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 7398521, Japan

[2] Hiroshima Univ, ADSM, Higashihiroshima 7398526, Japan

来源：

PHYSICA B-CONDENSED MATTER | 2002年 / 312卷

关键词：

Kondo semiconductor; tunneling; break junction; CeRhAs;

D O I：

10.1016/S0921-4526(01)01538-1

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Electron tunneling measurements have been carried out on the orthorhombic Kondo semiconductor CeRhAs using break junction. The measurements reveal the gap size 2Delta (4 K)= 0.5 +/- 0.1 eV. This compound exhibits the susceptibility maximum at T-Z = 510 K, below which the gap is believed to open. The gap ratio 2Delta/k(B)T(Z) = 12 +/- 3 is consistent with that for the isostructural CeNiSn and CeRhSb, thereby indicating the same mechanism of the gap creation among the compounds. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：221 / 223

页数：3

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