Cathodoluminescence characterization of a compound semiconductor native dielectric interface

被引：8

作者：

Berchenko, NN

Izhnin, II

Savchyn, VP

Stakhira, JM

Voitsekhovskii, AV

机构：

[1] MATH SCI RES INST,UA-290340 LVOV,UKRAINE

[2] LVOV IVAN FRANKO STATE UNIV,UA-290000 LVOV,UKRAINE

[3] TOMSK VV KUIBYSHEV STATE UNIV,SIBERIAN PHYS TECH INST,TOMSK 634050,RUSSIA

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1997年 / 44卷 / 1-3期

关键词：

cathodoluminescence spectroscopy; metal oxide semiconductor; x-ray photoelectron spectroscopy; auger electron spectroscopy;

D O I：

10.1016/S0921-5107(96)01813-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The possibilities of cathodoluminescence spectroscopy are illustrated by examples of the investigation of the oxide-semiconductor structures obtained by different oxidation techniques of group II, III and IV chalcogenides. The cathodoluminescence results are used directly for the phase identification and their spatial distribution determination in the oxide layer and at the interface with the semiconductor. (C) 1997 Elsevier Science S.A.

引用

页码：139 / 142

页数：4

共 9 条

[1]

AFONIN OF, 1992, SOV TECH PHYS LETT, V18, P222

[2]

BERCHENKO NN, 1994, ZH TEKH FIZ+, V64, P184

[3]

BERCHENKO NN, 1995, 15 EUR C SURF SCI LI

[4]

BERCHENKO NN, 1988, SOV TECH PHYS LETT, V14, P1041

[5] ON THE NATURE OF OXIDES ON INP-SURFACES [J].

HOLLINGER, G ;

BERGIGNAT, E ;

JOSEPH, J ;

ROBACH, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (06) :2082-2088

[6]

KANAYA K, 1972, J PHYS D, V14, P127

[7] GROWTH MECHANISMS OF ANODIC OXIDE AND SULFIDE FILMS ON HGCDTE [J].

STRONG, RL .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04) :2003-2006

[8] SURFACE CHARACTERIZATION OF HG0.7CD0.3TE NATIVE OXIDES [J].

WAGER, JF ;

RHIGER, DR .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (01) :212-217

[9]

Yacobi B.G., 1990, CATHODOLUMINESCENCE, P292

← 1 →