Microwave performance of GaAs MOSFET with wet thermally oxidized InAlP gate dielectric

被引：21

作者：

Cao, Y. ^{[1
]}

Li, X. ^{[1
]}

Zhang, J. ^{[1
]}

Fay, P. ^{[1
]}

Kosel, T. H. ^{[1
]}

Hall, D. C. ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Elect Engn, Notre Dame, IN 46617 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2006年 / 27卷 / 05期

关键词：

gallium arsenide; InAlP native oxide; microwave FETs; MOSFETs; oxidation;

D O I：

10.1109/LED.2006.872898

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the first demonstration of a microwave-frequency operation of a GaAs MOSFET fabricated using a wet thermal oxidization of InAlP lattice-matched to GaAs to form a native-oxide gate insulator. Devices with 1-mu m gate lengths exhibit a cutoff frequency (f(t)) of 13.7 GHz and a maximum frequency of oscillation (f(max)) of 37.6 GHz, as well as a peak extrinsic transconductance of 73.6 mS/mm. A low-leakage current density of 3.8 x 10(-3) A/cm(2) at 1-V bias for an MOS capacitor demonstrates the good insulating properties of the similar to 11-mn thick native gate oxide.

引用

页码：317 / 319

页数：3

共 26 条

[1] Wet oxidation of AlxGa1-xAs: Temporal evolution of composition and microstructure and the implications for metal-insulator-semiconductor applications [J].

Ashby, CIH ;

Sullivan, JP ;

Newcomer, PP ;

Missert, NA ;

Hou, HQ ;

Hammons, BE ;

Hafich, MJ ;

Baca, AG .

APPLIED PHYSICS LETTERS, 1997, 70 (18) :2443-2445

[2]

BARRIOS PJ, 2001, P INT S 3 NITR BAS S, P258

[3] GALLIUM ARSENIDE MOS TRANSISTORS [J].

BECKE, H ;

HALL, R ;

WHITE, J .

SOLID-STATE ELECTRONICS, 1965, 8 (10) :813-&

[4] Electrical properties of InAlP native oxides for metal-oxide-semiconductor device applications [J].

Cao, Y ;

Zhang, J ;

Li, X ;

Kosel, TH ;

Fay, P ;

Hall, DC ;

Zhang, XB ;

Dupuis, RD ;

Jasinski, JB ;

Liliental-Weber, Z .

APPLIED PHYSICS LETTERS, 2005, 86 (06) :1-3

[5] ALXGA1-XAS-GAAS METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS FORMED BY LATERAL WATER-VAPOR OXIDATION OF ALAS [J].

CHEN, EI ;

HOLONYAK, N ;

MARANOWSKI, SA .

APPLIED PHYSICS LETTERS, 1995, 66 (20) :2688-2690

[6] HYDROLYZATION OXIDATION OF ALXGA1-XAS-ALAS-GAAS QUANTUM-WELL HETEROSTRUCTURES AND SUPERLATTICES [J].

DALLESASSE, JM ;

HOLONYAK, N ;

SUGG, AR ;

RICHARD, TA ;

ELZEIN, N .

APPLIED PHYSICS LETTERS, 1990, 57 (26) :2844-2846

[7]

*EP INC, HET GROWN US LP MOCV

[8]

HOLMES AL, 1999, THESIS U TEXAS AUSTI

[9] Effects of thermally grown native oxides on the luminescence properties of compound semiconductors [J].

Islam, MR ;

Dupuis, RD ;

Curtis, AP ;

Stillman, GE .

APPLIED PHYSICS LETTERS, 1996, 69 (07) :946-948

[10] GALLIUM-ARSENIDE TRANSISTORS - REALIZATION THROUGH A MOLECULARLY DESIGNED INSULATOR [J].

JENKINS, PP ;

MACINNES, AN ;

TABIBAZAR, M ;

BARRON, AR .

SCIENCE, 1994, 263 (5154) :1751-1753

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